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Typical Characteristics (Continued)
50
V GE = 8.0V
V GE = 5.0V
50
DUTY CYCLE < 0.5%, V CE = 5V
PULSE DURATION = 250μs
40
30
20
10
V GE = 4.5V
V GE = 4.0V
V GE = 3.7V
40
30
20
10
T J = 175°C
T J = 25°C
0
0
1.0
2.0
3.0
T J = 175°C
4.0
0
1.0
1.5
2.0
2.5
3.0
T J = -40°C
3.5
4.0
4.5
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
50
V GE , GATE TO EMITTER VOLTAGE (V)
Figure 8. Transfer Characteristics
V GE = 4.0V
2.0
V CE = V GE
I CE = 1mA
40
1.8
30
1.6
20
1.4
10
1.2
0
25
50
75
100
125
150
175
1.0
-50
-25
0
25
50
75
100
125
150
175
T C , CASE TEMPERATURE (°C)
Figure 9. DC Collector Current vs Case
Temperature
T J , JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage vs Junction
Temperature
10000
1000
V ECS = 24V
20
18
16
I CE = 6.5A, V GE = 5V, R G = 1K ?
Resistive t OFF
14
100
V CES = 300V
12
Inductive t OFF
10
10
8
V CES = 250V
1
6
4
Resistive t ON
0.1
-50
-25
0
25
50
75
100
125
150
175
2
25
50
75
100
125
150
175
T J , JUNCTION TEMPERATURE (°C)
Figure 11. Leakage Current vs Junction
Temperature
?2009 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE (°C)
Figure 12. Switching Time vs Junction
Temperature
ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3 Rev. C4, November 2009
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